Abstract
This study investigates the impact of different nitridation processes on hafnium silicon oxynitride (HfSiON) dielectrics. It is demonstrated that the threshold voltage ( V T vs. L g) behavior at short gate lengths is strongly impacted by the nitridation process, depending on the Hf/(Hf+Si) ratio and the HfSiON thickness. A Plasma nitridation in oxidizing ambient results in a modification of the dielectric that can explain the anomalous V T behavior in devices integrated with hafnium-based dielectrics and metal gate. Reduction in anomalous V T behavior and limited gate leakage is achieved by applying a thermal nitridation in a NH 3 ambient on Hf-rich silicon oxynitride.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
