Abstract
Low-frequency measurements were made (100 Hz to 10 MHz) of n-p-n AlGaAs/GaAs HBTs with and without AlGaAs ledges as a function of bias current, geometry, aluminum mole fraction in the emitter, and temperature. These measurements show the existence of three distinct regions in the noise spectra: a 1/f shape associated with the base surface, a Lorentzian shape associated with the forward-biased emitter-base junction, and a flat region associated with shot noise. The measurements also indicate that the anomalous noise bump is generated by a trap in the AlGaAs near the surface of the emitter-base junction.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
