Reducing electrical losses of textured monolithic perovskite/silicon tandem solar cells by tailoring nanocrystalline silicon tunneling recombination junction

Abstract

Compatible with crystalline silicon industry standards, thermal evaporation of perovskite cells on fully textured wafers with noticeable light trapping has been established. Then perovskite/silicon tandem solar cells prepared by this method presented potentially high photocurrent, but their open-circuit voltage ( V oc ) and fill factor (FF) were moderate. Here, electrical losses of perovskite/silicon tandem solar cells were reduced through combining the theoretical model of tunneling recombination junction (TRJ) with the growth mechanism of nanocrystalline silicon films. Their V oc loss was compensated 38 mV (from 1.767 V to 1.805 V), and FF was increased from 64.29% to 74.15% via adjusting the transport and recombination of carriers in TRJ. The fully textured tandem solar cell exhibited an efficiency of 26.91%, which provided an approach towards tandem devices with more than 30% efficiency. • The theoretical model of TRJ and the growth mechanism of nanocrystalline silicon films were both combined to reduce electrical losses. • The V oc gain reached 38 mV (from 1.767V to 1.805V), and the FF was increased from 64.29% to 74.15% for tandem device. • The PCE of champion tandem solar cell reached 26.91%.