Abstract
In this research paper, a vertical tunnel field-effect transistor (TFET) structure containing a live metal strip and a material with low dielectric constant is designed, and its performance metrics are analyzed in detail. Low-k SiO2 is incorporated in the channel-drain region. A live molybdenum metal strip with low work function is placed in a high-k HfO2 layer in the source-channel region. The device is examined by the parameters I off, subthreshold swing, threshold voltage, and I on/I off ratio. The introduction of a live metal strip in the dielectric layer closer to the source-channel interface results in a minimum subthreshold slope and a good I on/I off ratio. The low-k material at the drain reduces the gate-to-drain capacitance. Both the SiO2 layer and the live metal strip show excellent leakage current reduction to 1.4 × 10-17 A/μm. The design provides a subthreshold swing of 5 mV/decade, which is an excellent improvement in TFETs, an on-current of 1.00 × 10-5 A/μm, an I on/I off ratio of 7.14 × 1011, and a threshold voltage of 0.28 V.
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