Abstract
In this paper analysis of dopant redistribution in a multilayer structure during microwave annealing for production of p−n junctions has been done. It has been shown that inhomogeneity of the solid-state structure leads to increasing sharpness of the p−n junction and the homogeneity of dopant distribution in doped areas. Inhomogeneity of temperature distribution in the multilayer structure (the inhomogeneity corresponds to microwave annealing), which leads to increasing sharpness of the p−n junction and the homogeneity of dopant distribution, has been studied. Some conditions on properties of the considered multilayer structure, which correspond to increasing sharpness and homogeneity, have been determined.
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