Abstract
The synthesis and properties of Ag-doped ZnO thin films and junctions grown by pulsed-laser deposition are examined. Hall measurements indicate that silver-doped ZnO films can be p-type when deposited at relatively low temperature with hole concentrations on the order of 10 19 cm -3 . Photoluminescence reveals a near-bandedge emission at room temperature with little or no visible emission due to midgap states. The properties of Ag-doped ZnO/Ga-doped ZnO thin-film junctions deposited on c-plane sapphire were also examined. Current-voltage measurements across the junction showed rectifying behavior with a turn-on voltage of 3.0 V. Light emission was detected for junctions under bias.
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