Abstract
We demonstrate a sol–gel processed Ti/TiOx/Pt device for rectifying characteristics as well as resistive switching. In the rectification mode, Ti/TiOx/Pt device exhibited a forward current density (>102 A/cm2) and on/off ratio (>104) owing to asymmetric Schottky barrier at the Ti/TiOx (0.11 eV) and TiOx/Pt (0.57 eV). After the forming process by applying the positive bias, the rectification mode of sol–gel TiOx device changed to the resistive switching mode. In the case of resistive switching mode, when applying the negative bias, the high resistance state (HRS) is dominated by Schottky emission in low voltage and by Poole–Frenkel emission in high voltage. Contrary to applying the negative bias, the HRS exhibited the Schottky emission in the whole positive bias. Different type of switching mechanisms might be attributed to the oxygen vacancy distribution across the TiOx active layer.
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