Abstract
The resistive switching behaviors by using a cobalt oxide (CoO) were demonstrated. In this memory device, rectifier characteristics and analog bipolar resistive switching behavior were obtained. On account of analog resistance conversion features, the nonlinear transmission characteristics of synapses, pulse-time-dependent plasticity, long-term/short-term memory, and "learning” and "forgetting” behaviors of synapses are simulated and carried out. The analog bipolar resistance switch was ascribed to the change of schottky barrier due to the local migration of oxygen ions in CoO/Al junction. This kind of memristor with analog resistance switch is very promising to provide a new implementation method for the development of electronic synapse function.
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