Recovery of Al—Si Alloys Neutron Irradiated at 78 °K

Abstract

AbstractA set of Al‐Si alloys (0.1 to 0.78 at.% Si) are neutron irradiated at 78 °K at a fast dose (E > 1 MeV) of 1.2 × 1018 n/cm2. The recovery of electrical resistivity is then investigated by isochronal and isothermal annealing. The results are compatible with the view that both interstitials and vacancies interact with Si atoms. The former are trapped during irradiation at 78 °K and are released in stage II‐b; the latter are trapped during their annealing in stage III, forming mobile Si‐vacancy couples which, in turn, either migrate to small interstitial clusters where vacancies annihilate, or combine one another, giving rise to complex aggregates which are eliminated in stage IV.