Abstract
The recovery current characteristics of the GIT bi‐directional switches in the diode mode are investigated. The recovery current waveforms are only dependent on the gate bias condition of the switching transistor, and not dependent on the gate bias of the GIT bi‐directional switch. The products of the recovery current peak and the recovery time estimated by the switching waveforms are almost constant in spite of changing the turn‐on voltage, and these values agree well with the charge at the diode shown by the integral of the diode capacitance and S2‐S1 voltage of the GIT bi‐directional switch. From these results, it is found that the independence of the gate bias of the GIT bi‐directional means that the influence of the hole injection is slight, and the diode operation of the GaN GIT bi‐directional switch is likely to be operated as schottky barrier diode.
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