Abstract
The 7 × 7 and 5 × 5 structures formed by Ge deposition on Si(111)7 × 7 at 500–750°C are analyzed by transmission electron diffraction and microscopy. By Patterson and Fourier syntheses and reliability-factor analyses, the dimer adatom stacking-fault model (DAS) is found to be the most favorable one: Ge atoms substitute randomly in the 7 × 7 structure, while they occupy adatom and stacking-fault sites in the 5 × 5 structure.
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