Abstract
The recent challenges for improving the operation speed of nanoelectronics have motivated research on manipulating light in on-chip integrated circuits. Hybrid plasmonic waveguides with low-dimensional semiconductors, including quantum dots and quantum wells, are a promising platform for realizing sub-diffraction limited optical components. Meanwhile, two-dimensional transition metal dichalcogenides (TMDs) have received broad interest in optoelectronics owing to tightly bound excitons at room temperature, strong light-matter and exciton-plasmon interactions, available top-down wafer-scale integration, and band-gap tunability. Here, we demonstrate principal functionalities for on-chip optical communications via reconfigurable exciton-plasmon interconversions in ∼200-nm-diameter Ag-nanowires overlapping onto TMD transistors. By varying device configurations for each operation purpose, three active components for optical communications are realized: field-effect exciton transistors with a channel length of ∼32 μm, field-effect exciton multiplexers transmitting multiple signals through a single NW and electrical detectors of propagating plasmons with a high On/Off ratio of∼190. Our results illustrate the unique merits of two-dimensional semiconductors for constructing reconfigurable device architectures in integrated nanophotonic circuits.
Highlights
The recent challenges for improving the operation speed of nanoelectronics have motivated research on manipulating light in on-chip integrated circuits
A 200-nm-diameter Ag-NW for Surface plasmon polaritons (SPPs) waveguides is partially overlapped with a monolayer MoS2 field-effect transistor (FET) on an SiO2 (300 nm)/Si wafer
The near-field of SPP0 is absorbed in MoS2 layers and excites excitons (l1E660 nm) at the NW/MoS2 overlapping region[26,30], where the exciton fluxes are modulated by gate bias (VG) for excess carrier doping[13,24]
Summary
The recent challenges for improving the operation speed of nanoelectronics have motivated research on manipulating light in on-chip integrated circuits. Hybrid plasmonic waveguides with low-dimensional semiconductors, including quantum dots and quantum wells, are a promising platform for realizing sub-diffraction limited optical components. By varying device configurations for each operation purpose, three active components for optical communications are realized: field-effect exciton transistors with a channel length of B32 mm, field-effect exciton multiplexers transmitting multiple signals through a single NW and electrical detectors of propagating plasmons with a high On/Off ratio ofB190. We demonstrate the crucial optical components for nanophotonic circuits using reconfigurable exciton-to-plasmon and plasmon-to-exciton interconversions To realize these concepts, we introduce Ag-nanowires (NWs) for SPP waveguides to 2D semiconductor devices. Using Ag-NW-hybridized 2D semiconductor devices with various configurations, three active components for optical communications are realized: field-effect exciton transistors, field-effect exciton multiplexers and electrical detectors of propagating plasmons
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