Abstract
The influence of the spontaneous recombination mechanism and the temperature- and wavelength-dependent material gain on the performance of 1.3-μm InGaAsP traveling-wave semiconductor laser amplifiers is analyzed. Measurements of signal gain are presented. Frequency detuning and optical bandwidth characteristics are discussed. By considering the trade-off between optical bandwidth and resonant signal gain, guidelines for the requirements to the facet reflectivity are given.
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