Abstract
We present optical properties of GaN/AlGaN structures containing quantum dots, which were obtained in a low-pressure MOVPE reactor on a SiH4-treated surface. Photoluminescence (PL) shows two bright PL bands (P1, P2) and one weak PL band (P3) at energies of 3.48 eV, 3.44 eV and 3.35 eV, respectively. Time-resolved PL shows that the P1, P2 and P3 bands have lifetimes of about 0.05 ns, 0.4 ns and 1.3 ns, respectively. Micro-photoluminescence measurements reveal that these bands consist in fact of many sharp lines coming from small spots on the sample. Such behaviour is characteristic for quantum dots or islands. The P2 shows significant spectral shift with time. As confirmed by power dependent measurements, the spectral shift is due to excitation of high-energy quantum dots followed by diffusion of excitons between QDs to lower energies. Excitation distribution parameters found at low temperature allow explaining of the behaviour of the PL at higher temperatures. (© 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
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