Abstract
Spontaneous emission has been used to evaluate the proportion of the different recombination channels in 2.4–3.2 µm type I- GaInAsSb quantum-well lasers operating at room temperature. The method consists in using the square root of the integrated spontaneous emission rate as a value proportional to the carrier density. A second-degree polynomial relationship can then be used to determine the proportion of the different recombination currents (monomolecular, radiative and Auger) in a laser diode operated below threshold. A notable increase of the Auger recombination has been observed with increasing wavelength. Auger recombination currents account for only 26% of the total current at threshold at 2.4 µm, while the proportion reaches 55% at 2.8 µm and 64% at 3.2 µm.
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