Abstract
Abstract Heavy Ion Elastic Recoil Detection Spectrometry and Rutherford Backscattering Analysis have been used to analyse thin films of strontium bismuth tantalate (SBT). This study uses these analysis techniques to investigate the interdiffusion of various elements in SBT/Pt/Ti/SiO2/Si structures which occurs during the annealing process. Evidence of diffusion of bismuth through the platinum electrode and titanium is shown within the platinum electrode.
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