Abstract
Recent progress in refractory-metal silicide formation by ion beam mixing and subsequent annealing (the ITM technique) is reviewed in terms of ion beam mixing (IM), silicidation and device applications. Important items for further investigations to improve the technique to the level required for VLSI production applications are pointed out; they are clarification of the mechanism for lateral silicide suppression and clarification of the effects of recoiled metal atoms and IM induced defects on junction leakage current and MOS properties.
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