Abstract
The chemical vapor growth technique has been used extensively for the preparation and crystal growth of electronic materials either in the bulk form or as thin layers on substrate surfaces. Using the chemical transport technique or the reaction of gaseous compounds containing the constituents of the desired material, electronic materials with thicknesses in a wide range can be prepared at temperatures considerably below their melting points or decomposition temperatures. Furthermore, the impurity concentration and distribution in the product can be controlled to an extent not obtainable by other techniques. The recent progress in the chemical vapor growth of semiconductors, insulators, conductors, magnetic materials, and superconductors is discussed with emphasis on the epitaxial growth of semiconductors.
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