Abstract
Calculations are presented for negative differential resistance (NDR) and switching in layered GaAsAl x Ga 1− x As heterostructures with a high electric field parallel to the interface. The mechanism is based on thermionic emission of hot electrons from the GaAs layers into the Al x Ga 1− x As layers. An analytical model is obtained in the limit of relatively large layer widths (400 Å or wider). The method of moments is employed to solve the Boltzmann equation, assuming a position-dependent electron temperature and Quasi-Fermi level in the Al x Ga 1− x As layers, and a position-independent electron temperature and Quasi-Fermi level in the narrower GaAs layer. Thermal conduction of hot electrons from the GaAs layer into the Al x Ga 1− x As layers is taken into account. The results of the calculations show that the threshold electric field for the onset of NDR and the peak-to-valley ratio can be controlled to a large extent by adjusting the mobility of the Al x Ga 1− x As layer, the layer dimensions, and the potential barrier (Al mole fraction in the Al x Ga 1− x As).
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
