Abstract
AbstractWe report on the growth of a completely relaxed, high‐ crystalline‐quality, and thick GaInN layer on a grooved m‐plane GaN template using sidewall epitaxial lateral overgrowth (SELO) technology. We grew GaInN‐based multiple quantum wells (MQWs) on this GaInN layer, and the PL intensity was compared with that for the same GaInN/GaN MQWs on m‐plane GaN grown by SELO. The PL peak intensity obtained from the GaInN/GaN MQW on the high‐crystalline‐quality thick GaInN on grooved GaN was approximately 1.7 times higher than that on the SELO m‐plane GaN template. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
