Abstract
Abstract A few years ago a low noise avalanche photodiode with a near unity excess noise factor was proposed. This detector achieves a high ratio of ionization coefficient κ via a suitable staircase band diagram. This APD can in principle exhibit photomultiplier-like noise behavior. In this paper we report the first realization of a staircase APD, grown in AlGaAs/GaAs by MBE, consisting of a ten-stage undoped staircase high-field region between p+ and n+ GaAs layers. Typical dark currents were 200 pA at the breakdown onset. The electron initiated avalanche gain was greater than 100 at the same voltage. Ionization ratios greater than 10 were estimated. Pulse responses with a full width at half maximum (FWHM) of 200 ps were demonstrated.
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Schedule a callMore From: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
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