Abstract
Ultrathin Cu(In,Ga)Se 2 (CIGS) films were deposited by 1-stage, 2-stage and 3-stage co-evaporation processes. In situ, real time spectroscopic ellipsometry (RTSE) was used to study the growth dynamics of the ultrathin CIGS films. Time dependent surface roughness layer (d s ) and bulk layer (d b ) thicknesses were extracted in the early stages of film growth. Exsitu spectroscopic ellipsometry was used to characterize the fundamental optical constants of these films. Other ex-situ measurements were performed on each ultrathin layer to corroborate composition, thickness, grain size and surface roughness thickness obtained by the SE measurements.
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