Abstract
Abstract A RHEED system has been developed that allows real-time monitoring of RHEED information throughout a multilayer growth run with rotation. The machine vision system consists of high-speed image capture hardware coupled with digital signal processing software that allows the real-time extraction/analysis of the RHEED intensity and width signals from the noise induced by substrate rotation. This system has been used to investigate the oxide desorption process on GaAs substrates, along with the specular spot intensity and width variation during the growth of a set of InGaAs AlGaAs single quantum well structures with systematically varied process parameters. A strong correlation of the specular spot intensity with growth parameters has been observed. It is also shown that the observed specular spot intensity can be used to predict the quality of the InGaAs quantum well structures.
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