Abstract
Using an in situ spectral reflectance (SR) method, we monitored the growth procedure of InAs QD layer on InP substrate grown by low-pressure metalorganic chemical vapor deposition. The surface reconstruction of the InP buffer layer at 530 °C under P-rich condition was determined by the subtraction SR and explained to be (2 × 4)-like structures composed of the [ 1 1 ¯ 0 ] P-dimers and [1 1 0] In-dimers. The [1 1 0] and [ 1 1 ¯ 0 ] SR signals at different wavelengths showed different behaviors, which was interpreted to be caused by As/P exchange reaction and the other diverse surface processes. This analysis was confirmed by the comparison between SR signal and multibeam optical stress sensor data.
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