Abstract
Detailed observations were carried out on the microscopic surface features of GaAs and AlAs on GaAs (111)B surfaces during molecular beam epitaxial growth with an alternating source supply by scanning microprobe reflection high-energy electron diffraction in real time. It was found that Ga (or Al) droplets are formed during growth under excess Ga (or Al) supply; the droplets migrate on the surfaces during and after Ga (or Al) supply in the homoepitaxial growth.
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