Abstract
AbstractLow‐energy electron diffraction and scanning tunneling microscopy (STM) were used to investigate the temperature‐induced phase transition of a room‐temperature 4 × 1 (4 × 1‐RT) phase of the In/Si(111) surface to a low‐temperature 8 × 2 (8 × 2‐LT) phase. Upon cooling, dark, one‐dimensional (1D) stripes appear inhomogeneously within the 4 × 1‐RT phase at temperatures above a transition temperature (Tc), coalesce to form two‐dimensional (2D) islands, and the overall surface finally transforms into the 8 × 2‐LT phase below Tc. The local current–voltage spectroscopy reveals that the dark 1D stripes inherit the nature of the low‐temperature phase, distinguishing it from the defect‐induced period‐doubling modulations. The fluctuations of the 1D stripes are observed in successive STM images. The presence of defects suppresses the 1D fluctuations, while it is obstructive to the 2D condensation of the LT phase below Tc. Copyright © 2006 John Wiley & Sons, Ltd.
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