Abstract
We have measured using x-ray photoelectron spectroscopy the surface composition, chemical state, and band bending of a GaAs{110} surface exposed to medium energy (0.5 and 3.0 keV) reactive N+2 ion bombardment at room temperature as a function of ion dose. Thermally stable, thin GaN films are formed at a rate is limited by ion-induced physical desorption of the surface layer. After annealing the sample, a small band bending shift toward higher kinetic energy (0.15 eV) is observed which results from the ion-induced formation of midgap charge acceptor states. The implication of these results on the use of GaN thin films for surface passivation of GaAs in device applications is described.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
