Abstract

Tungsten reactive ion etch (RIE) rate and resist selectivity behavior of three unique Freon systems are investigated using optical emission spectroscopy and electron scanning for chemical analysis (ESCA). An oxygen‐rich formulation exhibits an etch rate and selectivity to photoresist on the order of two‐three times that possible with . An optical emission spectral analogue has led to the discovery that 5–15% added to or yields a similar etch rate and selectivity advantage.

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