Abstract
Thin (100 nm) nanocrystalline dielectric films of lanthanum doped barium titanate were produced on Si substrates by means of reactive impulse plasma ablation deposition (IPD) from BaTiO<sub>3</sub> + La<sub>2</sub>O<sub>3</sub> (2 wt.%) target. Scanning electron microcopy and atomic force microscopy showed that the obtained layers were dense ceramics of uniform thickness with average roughness R<sub>a</sub> = 2.045 nm and the average grain size of the order of 15 nm. Measurements of current-voltage (IV) characteristics of metal-insulator-semiconductor (MIS) structures, produced by evaporation of metal (Al) electrodes on top of barium titanate films, allowed to determine that the leakage current density and critical electric field intensity (E<sub>BR</sub>) of investigated layers ranged from 10<sup>-12</sup> to 10<sup>-6</sup> A cm<sup>-2</sup> and from 0.2 to 0.5 MV cm<sup>-1</sup>, respectively. Capacitance-voltage (C-V) measurements of the same structures were performed in accumulation state showing that the dielectric constant value (εri) of films is of the order of 20.
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