Abstract
Hafnium silicide islanding occurs spontaneously when metallic Hf is deposited on a Si(001) surface and subsequently annealed at 750°C. Different coverages were investigated by scanning tunneling microscopy (STM) in order to verify distinct stages of island formation. Small islands occurred for 0.26 ML of deposited Hf, coalescing into flat top islands for longer deposition times. Atomic resolution STM and nanobeam electron diffraction allowed the determination of the mature islands top face structure, identified as the (061) surface of the HfSi2 in the C49 phase. Finally, scanning tunneling spectroscopy was carried out over the smallest islands, demonstrating their metallic behavior.
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