Abstract
The elemental composition and depth profiles of MgB2 films prepared by successive e-beam evaporation as well as by thermal co-deposition of Mg and B components were investigated by Rutherford backscattering spectrometry (RBS). In the case of films deposited by e-beam evaporation we studied both Mg-B precursors and appropriate MgB2 films grown on glassy carbon, Si(100) and J-sapphire substrates annealed in situ. For the films co-deposited by thermal evaporation on R-sapphire substrates and annealed ex situ we investigated superconducting MgB2 films only. The Tco values of all MgB2 films ranged from 21 to 30 K. Because of a very fine granular structure of the annealed films, confirmed also by SEM observations, we could not identify any MgB2 phase from x-ray diffraction (XRD) patterns. On the other hand, Mg2Si phase has been detected by XRD on the film–substrate interface for the superconducting film deposited on Si(100) substrate. The RBS measurements were performed with a 3.1 MeV 4He+ beam. Under these conditions, the 16O(α,α)16 elastic resonance allowed us to detect oxygen in all studied samples especially in B layers. The depth profiles of precursors prepared by successive e-beam evaporation showed clearly the multilayer film structure consisting of B and Mg layers. A strong interdiffusion between B and Mg layers may be observed after an in situ annealing, but still some degree of non-homogeneous component distribution may be observed. On the other hand, the MgB2 films co-deposited by thermal evaporation and annealed ex situ are much more homogeneous, but a higher content of oxygen is present.
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