Abstract
Maskless ion-implanted patterns formed by a focused-ion-beam (FIB) process were analyzed by a micro-Rutherford backscattering (RBS) technique with a focused 1.5 MeV helium ion beam. Gold ions were masklessly implanted in silicon at 100 keV with a beam width of 1 μm to a dose of 1–6 10 16 cm −2. Two dimensional elemental mapping images were obtained by scanning the microprobe to locally analyze the implanted area. Local doses were found to differ from implanted doses because of the sputtering during implantation.
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