Abstract
(RE,Y) 3(Fe,Ga) 5O 12 garnets, where RE=Eu or Gd, have been developed for use as magnetic bubble domain materials. Magnetic and crystallographic studies were used to find suitable compositions for epitaxial thin films on nonmagnetic garnet substrate crystals. Properties of films grown by liquid phase epitaxy on Czochralski Gd-Ga garnet (111) substrates are discussed. Uniaxial anisotropy in the films can be interpreted as being the result of a lattice mismatch stress mechanism. The Gd-Y films with uniaxial anisotropy are in tension while the Eu-Y films are in compression as shown by lattice spacing differences between films and their substrates. Uncracked, high stability Eu-Y films with very high compressive stresses were grown. Annealing experiments reveal significant changes in anisotropy which correlate with large changes in film lattice spacing. Thus, it is possible to obtain high uniaxial anisotropy in garnets containing only one kind of rare earth ion together with a nonmagnetic ion such as yttrium. These films support domains with very high wall velocities at typical device drive fields.
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