Abstract
A model is developed to simulate the rare earth luminescence intensity in dependence of both the excitation rate and the dopant concentration. For low excitation rates, as in the case of photoluminescence investigations, concentration quenching is expected. In contrast for high excitation rates (as generally realized in cathodoluminescence experiments) concentration quenching can be suppressed and thus luminescence intensity increases with increasing dopant concentration. These results reconcile the recent photo- and cathodoluminescence results on GaN:Er presented by Chen et al. (APL 96, 181901, 2010)10.1063/1.3421535. Further experimental results indicate that the physical basis of the model is adequate.
Highlights
Excited rare earth doped semiconductors suffer from the so-called concentration quenching effect,[1,2,3,4] i.e. the intensity of the rare earth luminescence decreases with increasing dopant concentration
This effect dominates if the excitation energy is transferred between many ions in the time necessary for the radiative decay
Since the energy transfer probability is increased with decreasing dopant distance, e.g.,5 concentration quenching is a typical effect at high concentrations
Summary
Two-dimensional distributed-feedback in InGaAs/GaAs quantum structure lattice arrays Appl. 101, 141127 (2012) High electron mobility through the edge states in random networks of c-axis oriented wedge-shaped GaN nanowalls grown by molecular beam epitaxy Appl. 101, 132109 (2012) InGaP-based InGaAs quantum dot solar cells with GaAs spacer layer fabricated using solid-source molecular beam epitaxy Appl. 101, 133110 (2012) Comparative study of surface recombination in hexagonal GaN and ZnO surfaces J. 112, 063509 (2012) Self-assembly of InAs ring complexes on InP substrates by droplet epitaxy J.
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