Abstract
Rapid thermal oxidation of sputtering power dependent vanadium thin films for VO2 thin films preparation is investigated. Metallic vanadium thin films are deposited by direct current magnetron sputtering at different sputtering power. They are characterized by the atomic force microscope (AFM) and the field emission-scanning electron microscope (FE-SEM). In our experiment, we increase the sputtering power while reducing the sputtering time to maintain the same thickness of the film. In this process, the particle size of metallic vanadium increases. The vanadium thin films are oxidized at the same annealing conditions by rapid thermal annealing. X-ray diffraction (XRD) results indicate there is polycrystalline VO2 in oxidation products of the metallic vanadium with large average particle radius. Surface morphology and metal-to-insulator transition (MIT) properties of VO2 thin films are characterized. When average particle radius of the metallic vanadium is 8.78 nm, the VO2 thin film has the largest particles and maximum phase transition magnitude. These results reveal the relationship of sputtering power and the particle size of vanadium thin films, and illustrate the effect of the particle size of vanadium thin films on VO2 thin films preparation through the oxide growth rate law for the oxidation of spherical particles.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
