Abstract
A 100-kW water-walled dc argon arc lamp has been used for the first time to post anneal ion-implanted InP samples. Temperatures as high as 925 °C and short cycle times (3 and 10 s) are used for the process. Se and Be were ion implanted into room temperature and hot substrate InP samples. A sputter deposited SiO2 layer, 120 mm thick, covering all wafer surfaces was used as an encapsulant during the lamp anneal. Hot substrate Se implants (400 keV, 1.8×1014 cm−2, 200 °C) show an average mobility of 1415 cm2/Vs and an activation of ∼63%, and room-temperature Be implants (50 keV, 3.35×1013 cm−2 and 150 keV, 5.74×1013 cm−2) an average mobility of 88 cm2/Vs and activation of ∼45%. This annealing technique is straightforward and gives activations and mobilities comparable to, or better than, the best furnace anneals with sharp profiles and simplified surface encapsulation.
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