Abstract
Results of an extensive study of the interfacial intermixing and interaction of the Pt/Ti bilayer metallization to seven III-V binary and related ternary compound semiconductor systems, as well as the contact electrical properties, are given. Pt/Ti contact to InAs and In/sub 0.53/Ga/sub 0.47/As were ohmic as deposited, while the same metallization scheme on GaAs, GaP, InP, In/sub 0.52/Al/sub 0.48/As, and Ga/sub 0.7/Al/sub 0.3/As provided a rectifying contact as-deposited. The latter group of contacts, with the exception of InP and GaP, were transformed to an ohmic contact as a result of rapid thermal processing (RTP) at the temperature range of 300 to 450 degrees C. A linear correlation between the semiconductor bandgap value and the Schottky-barrier height, measured in the Pt/Ti contacts, was observed. >
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