Abstract
The rapid diffusion process of Zn in GaAs was experimentally investigated by making use of the deterioration of GaAs Esaki diodes. Three diffusion processes were found responsible for the deterioration. The identification of all three diffusion processes was not possible in this study. The diffusion constants of these processes at an ambient temperature of 300°K were in the order of 10 −20 cm 2 sec −1. This figure is about 10 20 times larger than the thermal diffusion constant at the same temperature. This factor is approximately the value of exp( eV/ kT) for T=300° K and the forward bias voltage across a junction of 1·2 V observed in this experiment. The result obtained here confirms the deterioration mechanism proposed by Longini.
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