Abstract
The buildup of a large long-lived electron-hole drop in stressed Ge is studied using its Alfvén wave resonances. This microwave method permits rapid time resolution of the formation process after a short intense (100 nsec, 7 W) laser excitation pulse. A delay of about 1 μsec is observed before the drop radius rapidly increases from zero to ∼ 100 μm within the next μsec. This is consistent with the interpretation that the photo-produced electron-hole pairs are quickly accelerated to the strain-induced potential minimum which is well within the crystal.
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