Abstract
Crystallization of silicon films formed on glass substrates was achieved by rapid-joule heating of Cr strips adjacently formed via 200-nm-thick SiO 2 intermediate layers. 3-μs-pulsed voltages applied to the Cr strips caused a high joule heating intensity about 1×10 6 W/ cm 2 . Transmission electron microscopy measurements confirmed a crystalline grain size of 50–100 nm. 1-μm-long crystalline grain growth was observed just beneath of the edge of Cr strips. The activation of phosphorus atoms according to crystallization was also achieved.
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