Abstract
The rapid crystallization of amorphous silicon utilizing a very-high-frequency thermal microplasma jet of argon is demonstrated. Highly crystallized microcrystalline Si films were fabricated on textured a-Si:H:B/SnO 2/glass by adjusting the translational velocity of the substrate stage. The crystallization of amorphous silicon was promoted from the bottom surface with no significant inter diffusions of B and Sn from Si:H:B/SnO 2 layers to intrinsic crystallized Si layer. The preliminary result of p–i–n Si thin-film solar cell is demonstrated using the microcrystalline Si films fabricated by the plasma annealing.
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