Rapid Annealing Using Halogen Lamps

Abstract

A few seconds halogen lamp annealing (HLA) technology is evaluated from the viewpoint of practical application to complementary metal oxide semiconductor (CMOS) very large scale integration (VLSI) processing. , 11B, and 31P ion‐implanted silicon layers have been investigated on their isothermal short‐time annealing behavior of junction leakage current, recrystallization, activation, and junction depth. We have found that a few seconds annealing of 800°C is enough to crystalline regrow the or 31P ion‐implanted amorphous layer, to activate or 31P ion‐implanted dopants, to form titanium silicide, and to reduce the area leakage current of both n+‐p− and p+‐n− junctions without dopant diffusion. But activation of 11B+ ion‐implanted dopants, reduction of perimeter leakage current, molybdenum silicide formation, and phosphosilicate glass (PSG) reflow require a little higher temperature heat‐treatment.