Abstract
Recently, the present authors proposed a correlated barrier hopping model for bipolarons based on continuous-time random-walk approximation to explain ac conductivity in a-As 2Se 3 and estimated the density of defect states based on this approach. It was observed that the density of defect states deduced from this approach is less than as deduced from correlated barrier hopping based on pair approximation and are consistent with the estimated density of defect states from other studies, namely, light-induced electron spin resonance and drift mobility. Now, this approach is extended to the single- and bi-polaron contribution to ac conductivity and apply to the experimental data of a-Se and a-As 2Se 3 + 0.5 at.% Ag. The present approach explains the single- as well as bi-polaron contribution to ac conductivity and the deduced density of defect states is less than that deduced from correlated barrier hopping based on pair approximation.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
