Abstract
Spontaneous and induced instabilities in the character of Random Telegraph Signal (RTS) noise are studied in photodetector arrays, fabricated on lattice-mismatched InGaAs/InP heterostructures. The disappearance and reappearance of the RTS noise as well as abrupt changes in the RTS noise amplitude and pulse complexity are investigated as a function of voltage and temperature. The RTS noise instabilities are explained in terms of structural transformation of complex multistable crystalline defects.
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