Abstract
AbstractWe compare results from Raman scattering for both capped and uncapped Ge quantum dots under hydrostatic pressure. The behavior of lattice vibrations and electronic transitions of the quantum dots are affected by the presence or absence of a cap layer. The pressure coefficient obtained for the Ge mode of relaxed, uncapped islands is close to the corresponding value in bulk, whereas it is reduced by ∼20% in presence of a Si cap layer. This result can be understood by taking into account the change of the boundary condition imposed to the Ge lattice, which is constrained to match that of the silicon matrix. Measurements of the capped sample exhibit a resonant enhancement which is not appreciable for the uncapped dots. We relate this effect to the different lifetime of electronic states. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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