Abstract
The pseudomorphic In x Ga 1− x As/GaAs structures are of particular interest because of the high value of the I In x Ga 1− x As electron mobility and the great conduction band offset leading to good electron confinement at the interface. Raman scattering experiments were carried out to measure the optical lattice modes of a series of In x Ga 1− x As/GaAs strained-layer superlattices grown by molecular beam epitaxy on the (001) surface of GaAs substrates. The frequency shifts between strained and strain-free layers give a quantitative determination of strain in each type of layer. For this purpose, we measured the Raman phonon frequencies of bulk In x Ga 1− x As alloy samples for a large range of composition. Double-crystal X-ray rocking curve (XRC) data for superlattices are compared with those of Raman experiments. This allows a more valid estimation of the obtained results.
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