Abstract
In this paper, we report a feasible route of growing epitaxial graphene on 4H—SiC (0001) substrate in a low pressure of 4 mbar (1 bar=105 Pa) with an argon flux of 2 standard liters per minute at 1200, 1300, 1400, and 1500 °C in a commercial chemical vapour deposition SiC reactor. Using Raman spectroscopy and scanning electron microscopy, we confirm that epitaxial graphene evidently forms on SiC surface above 1300 °C with a size of several microns. By fitting the 2D band of Raman data with two-Lorentzian function, and comparing with the published reports, we conclude that epitaxial graphene grown at 1300 °C is four-layer graphene.
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