Abstract
We report on the studies of the 20 keV electron-beam irradiation (current density 50 μA/m2) effects on the epitaxial CaF2 film growth on a Si surface. It was found that, during the CaF2 growth on Si, the area exposed to the electron beam suffers strong modifications, such as in the surface morphology and film chemical composition. With reflection high-energy electron diffraction, atomic force microscopy and Raman spectroscopy, it is shown that the electron beam action leads to the CaSi2 layer synthesis at the interface of the silicon substrate and epitaxially growing CaF2 film.
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