Radiation Sensors Based on Field-Effect and Unijunction Transistors

Abstract

The possibility of increasing the sensitivity of radiation sensors based on the field effect transistors is experimentally studied. A bridge circuit connecting two transistors with positive sign of the radiation sensitivity and two transistors with negative sign of the radiation sensitivity makes it possible to increase the dependence of the output voltage in the bridge diagonal on the absorbed radiation dose by an order of magnitude. The frequency sensor-converter of radiation designed on a unijunction transistor according to the circuit of the relaxation oscillator has the minimum number of individually attached components. The replacement of the resistor setting the current in the emitter circuit with a field-effect transistor sensitive to radiation increases the sensor sensitivity 5–10 times.