Abstract
Trapping centers produced by 250-keV, 400-keV, 700-keV, and 1.5-MeV proton irradiations at room temperature in AlGaAs-GaAs solar cells have been studied. The traps detected by deep-level transient spectroscopy are the same as those produced by electron irradiations, only their introduction rates are different. An introduction rate was determined for each trapping center at the various proton energies. The large concentration of the E4 trap suggests it is associated with a cluster-type defect.
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